45 a 60 a new add-a-pak tm power modules thyristor/ diode and thyristor/ thyristor irk.41, .56 series bulletin i27131 rev. c 09/97 1 www.irf.com parameters irk.41 irk.56 units i t(av) or i f(av) @ 85c i o(rms) (*) 100 135 a i tsm @ 50hz 850 1310 a i fsm @ 60hz 890 1370 a i 2 t @ 50hz 3.61 8.50 ka 2 s @ 60hz 3.30 7.82 ka 2 s i 2 ? t 36.1 85.0 ka 2 ? s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to125 o c (*) as ac switch. these irk series of new add-a-paks use power diodes and thyristors in a variety of circuit configura- tions. the semiconductor chips are electrically iso- lated from the base plate, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or ac controllers. these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, and temperature and motor speed control circuits. 45 60 a major ratings and characteristics features electrically isolated: dbc base plate 3500 v rms isolating voltage standard jedec package simplified mechanical designs, rapid assembly auxiliary cathode terminals for wiring convenience high surge capability wide choice of circuit configurations large creepage distances ul e78996 approved description
irk.41, .56 series 2 bulletin i27131 rev. c 09/97 www.irf.com i t(av) max. average on-state current (thyristors) 45 60 180 o conduction, half sine wave, i f(av) maximum average 45 60 t c = 85 o c forward current (diodes) i o(rms ) max. continuous rms on-state current. as ac switch i tsm max. peak, one cycle 850 1310 t=10ms no voltage or non-repetitive on-state 890 1370 t=8.3ms reapplied i fsm or forward current 715 1100 t=10ms 100% v rrm 750 1150 t=8.3ms reapplied 940 1450 t=10ms t j = 25 o c, 985 1520 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 3.61 8.56 t=10ms no voltage 3.30 7.82 t=8.3ms reapplied 2.56 6.05 t=10ms 100% v rrm 2.33 5.53 t=8.3ms reapplied 4.42 10.05 t=10ms t j = 25 o c, 4.03 9.60 t=8.3ms no voltage reapplied i 2 ? t max. i 2 ? t for fusing (1) 36.1 85.6 ka 2 ? s t=0.1 to 10ms, no voltage reapplied v t(to) max. value of threshold 0.88 0.85 low level (3) voltage (2) 0.91 0.88 high level (4) r t max. value of on-state 5.90 3.53 low level (3) slope resistance (2) 5.74 3.41 high level (4) v tm max. peak on-state or i tm = p x i t(av) t j = 25 o c v fm forward voltage i fm = p x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on i tm = p x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v,resistive load t j = t j max t j = t j max parameters irk.41 irk.56 units conditions 100 135 (1) i 2 t for time t x = i 2 ? t x ? t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7% x p x i av < i < p x i av (4) i > p x i av on-state conduction i h max. holding current 200 initial t j = t j max. 150 a/s a ka 2 s v m w 1.81 1.54 v ma or i (rms) i (rms) electrical specifications voltage ratings type number v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 125c -vvvma 04 400 500 400 06 600 700 600 08 800 900 800 irk.41/ .56 10 1000 1100 1000 15 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 sinusoidal half wave, initial t j = t j max.
irk.41, .56 series 3 bulletin i27131 rev. c 09/97 www.irf.com t j junction operating temperature range t stg storage temp. range - 40 to 125 r thjc max. internal thermal resistance, junction 0.23 0.20 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink 5 busbar 3 wt approximate weight 83 (3) g (oz) case style to-240aa jedec thermal and mechanical specifications parameters irk.41 irk.56 units conditions - 40 to 125 0.1 (5) available with dv/dt = 1000v/ m s, to complete code add s90 i.e. irkt41/16 s90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound c k/w nm mounting surface flat, smooth and greased. flatness < 0.03 mm; roughness < 0.02 mm i rrm max. peak reverse and i drm off-state leakage current at v rrm , v drm 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 125 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit 15 ma t j = 125 o c, gate open circuit 500 v/ m s blocking v ins rms isolation voltage v triggering p gm max. peak gate power 10 10 p g(av) max. average gate power 2.5 2.5 i gm max. peak gate current 2.5 2.5 a -v gm max. peak negative gate voltage 4.0 t j = - 40c 2.5 t j = 25c 1.7 t j = 125c 270 t j = - 40c 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage that will not trigger i gd max. gate current that will not trigger parameters irk.41 irk.56 units conditions 0.25 v 6ma anode supply = 6v resistive load v gt max. gate voltage required to trigger anode supply = 6v resistive load i gt max. gate current required to trigger w v 10 t j = 125 o c, rated v drm applied t j = 125 o c, rated v drm applied parameters irk.41 irk.56 units conditions
irk.41, .56 series 4 bulletin i27131 rev. c 09/97 www.irf.com sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 irk.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 c/w outlines table irkt../.. (*) irkl../.. (*) irkh../.. (*) (*) for terminals connections, see circuit configurations table all dimensions in millimeters (inches) 30 0.5 (1 .18 0.02) 29 0 .5 (1 .1 3 0.0 2) 6.1 0.3 (0.24 0.01) 24 0.5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1.18 0.04 ) faston tab. 2.8 x 0.8 20 .5 0.75 ( 0.8 1 0.0 3) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) 5.8 0.25 ( 0.16 0.0 1) 4 pitch 4.0 0.2 ( 0.23 0.01) (0.25 0.01) 6.3 0.3 576 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0 .02) (0.79 0.02) 1 30 0.5 (1.18 0.02 ) 29 0 .5 (1.13 0.02) 6.1 0.3 (0.24 0.01 ) 24 0.5 18 ref. (0.71) 15 .5 0.5 (0.61 0.02) 30 0.1 (1 .18 0.04 ) faston tab. 2.8 x 0.8 20.5 0.75 (0.8 1 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02 ) ( 0.16 0.01) 4 pitch 4.0 0.2 (0.25 0.01 ) 6.3 0.3 5 2 3 80 0.3 (3.15 0.01) ( 3.62 0.02) 92 0 .5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02 ) (0.79 0.02) 1 30 0.5 (1.18 0.02) 29 0.5 ( 1.1 3 0.02) 6.1 0.3 (0 .2 4 0.01 ) 24 0 .5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 ( 1.18 0.0 4) faston tab. 2.8 x 0.8 20.5 0.75 (0 .8 1 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) (0 .1 6 0.01) pitch 4.0 0.2 (0.25 0.01) 6.3 0.3 76 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02) (0.79 0.02) 1 d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc) note: to order the optional hardware see bulletin i27900
irk.41, .56 series 5 bulletin i27131 rev. c 09/97 www.irf.com irk t 56 / 16 s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - current code * * 4 - voltage code (see voltage ratings table) 5 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs * * available with no auxiliary cathode. to specify change: 41 to 42 56 to 57 e.g. : irkt57/16 etc. ordering information table irk.57 types with no auxiliary cathode circuit configurations table irkt irkh irkl + k2 g2 - k1 g1 ~ (1) (2) (3) (4) (5) (7) (6) + - k1 g1 ~ (1) (2) (3) (4) (5) + - ~ (1) (2) (3) k2 (7) g2 (6) 6 4 13.8 (0.53) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 80 90 100 110 120 130 0 102030405 0 maximum allowable case temperature ( c ) 30 60 90 120 180 average on-state current (a) conduction angle irk.41.. series r (dc) = 0.46 k/w thjc 80 90 100 110 120 130 0 2040608 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.41.. series r (dc) = 0.46 k/w thjc
irk.41, .56 series 6 bulletin i27131 rev. c 09/97 www.irf.com fig. 3 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 0 20 40 60 80 100 0 2040608 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.41.. series per junction t = 125c j 0 10 20 30 40 50 60 70 0 10203040 50 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) irk.41.. series per junction t = 125c j 300 400 500 600 700 800 110100 number of equal amplitude half cycle current pulses (n ) at any rated load condition and with rate d v applie d fo llo wing sur ge. rrm peak half sine wave on-state current (a) in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j irk.41.. series per junction 300 400 500 600 700 800 900 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. contro l initial t = 125 c no v oltage re applied rated v reapplied rrm j of conduction may not be maintained . peak half sine wave on-state current (a ) irk.41.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r 5 k / w t h s a 0 20 40 60 80 100 120 140 020 40 60 80 100 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.41.. series per module t = 125c j
irk.41, .56 series 7 bulletin i27131 rev. c 09/97 www.irf.com fig. 9 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 11 - current ratings characteristics fig. 10 - current ratings characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 50 100 150 200 250 300 350 0 20406080100 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.41.. series sin gle phase brid ge connected t = 125 c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0.2 k/ w r = 0 . 1 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.41.. series three phase bridge con nect ed t = 125c j 70 80 90 100 110 120 130 0 1020304050607 0 maximum allowable case temperature ( c ) 30 60 90 120 180 average on-state current (a) conduction angle irk.56.. series r (dc) = 0.40 k/w thjc 70 80 90 100 110 120 130 0 2040608010 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.56.. series r (dc) = 0.40 k/w thjc
irk.41, .56 series 8 bulletin i27131 rev. c 09/97 www.irf.com fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current fig. 13 - on-state power loss characteristics fig. 12 - on-state power loss characteristics fig. 16 - on-state power loss characteristics 0 20 40 60 80 100 120 0 2040608010 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.56.. series per junction t = 125c j 0 10 20 30 40 50 60 70 80 90 0 1020304050 60 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w ) averag e on-state curren t (a) irk.56.. series per junct ion t = 125c j 500 600 700 800 900 1000 1100 1200 110100 number of equal amplitude half cycle current pulses (n ) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j peak half sine wave on-state current (a ) irk.56.. series per junction 400 600 800 1000 1200 1400 0.01 0.1 1 peak half sine wave on-state current (a ) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. contro l initial t = 125 c no voltage reapplied rated v reapplied of conduction may not be maintained . j rrm irk.56.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient t emperature ( c ) 4 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0.5 k/ w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 4 k / w 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.56.. series pe r mod ule t = 125c j
irk.41, .56 series 9 bulletin i27131 rev. c 09/97 www.irf.com fig. 17 - on-state power loss characteristics fig. 18 - on-state power loss characteristics fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 2 k / w 1 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w 0 50 100 150 200 250 300 350 400 450 0 20 40 60 80 100 120 140 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.56.. series single phase bridge connected t = 125 c j 0 20406080100120140 maximum allowable ambient temperat ure ( c ) 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 180 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.56.. series th ree phas e brid ge connected t = 125c j 1 10 100 1000 0.511.522.533.544 .5 t = 25 c j instantaneous on-state cur rent (a) instantaneous on-state voltage (v) t = 125c j irk.56.. series per j unct ion 1 10 100 1000 0123456 7 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.41.. series per junction
irk.41, .56 series 10 bulletin i27131 rev. c 09/97 www.irf.com fig. 23 - thermal impedance z thjc characteristics fig. 22 - recovery current characteristics fig. 21 - recovery charge characteristics fig. 24 - gate characteristics 30 40 50 60 70 80 90 100 110 10 20 30 40 50 60 70 80 90 10 0 maximum reverse recovery current - irr (a ) rate of fall of forward current - di/dt (a/ s) 100 a 50 a i = 200 a tm 20 a 10 a irk.41.. series irk.56.. series t = 125 c j 100 150 200 250 300 350 400 450 500 10 20 30 40 50 60 70 80 90 10 0 100 a 50 a rate of fa ll of on-state cur ren t - di/dt (a/ s) maximum reverse recovery charge - qrr ( c ) i = 200 a tm 20 a 10 a irk.41.. series irk.56.. series t = 125 c j 0.01 0.1 1 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w ) per junction steady state v alue: r = 0.46 k/w r = 0.40 k/w (dc operation) irk.41.. series irk.56.. series thjc thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 12 5 c a)recommended load line for b)recom mended load l ine for vgd igd fr equency limited by pg(av) rated di/dt: 20 v, 30 ohms tr = 0.5 s, t p >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s irk.41../.56.. series
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